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Irradiation-induced defects in InN and GaN studied with positron annihilation

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Irradiation-induced defects in InN and GaN studied with positron annihilation

Auteurs : RBID : Pascal:10-0292462

Descripteurs français

Pascal (Inist)
- Défaut irradiation, Annihilation positon, Effet rayonnement, Recuit thermique rapide, Epitaxie jet moléculaire, Méthode MOCVD, Fluence, Lacune, Irradiation ion, Nitrure d'indium, Nitrure de gallium, InN, GaN.

English descriptors

KwdEn :
- Fluence, Gallium nitride, Indium nitride, Ion irradiation, Irradiation defect, MOCVD, Molecular beam epitaxy, Positron annihilation, Radiation effects, Rapid thermal annealing, Vacancies.

Abstract

We use positron annihilation to study 2-MeV ⁴He⁺ irradiated and subsequently rapid-thermal-annealed InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapour deposition. The irradiation fluences were in the range 5 x 10¹⁴-2 × 10¹⁶cm^-2. In vacancies are introduced in the irradiation at a low rate of 100cm^-1, with their concentration saturating in the mid-10¹⁷ cm^-3 range at an irradiation fluence of 2 × 10¹⁵ cm^-2. The annealing, performed at temperatures between 425 and 475 °C, is observed to result in an inhomogeneous redistribution of the In vacancies. The behaviour is opposite to GaN, where Ga vacancies are introduced at a much higher rate of 3600 cm^-1 showing no detectable saturation. About half of the Ga vacancies are found to recover in the annealing, in agreement with previous studies, while the remaining Ga vacancies undergo no spatial redistribution.

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Le document en format XML

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<author><name sortKey="Reurings, Floris" uniqKey="Reurings F">Floris Reurings</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Applied Physics, Aalto University, PO Box 11100</s1>
<s2>00076 Aalto Espoo</s2>
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<sZ>1 aut.</sZ>
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<wicri:noRegion>00076 Aalto Espoo</wicri:noRegion>
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</author>
<author><name sortKey="Tuomisto, Filip" uniqKey="Tuomisto F">Filip Tuomisto</name>
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<s2>00076 Aalto Espoo</s2>
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</author>
<author><name sortKey="Egger, Werner" uniqKey="Egger W">Werner Egger</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute für Angewandte Physik und Messtechnik, Universität der Bundeswehr München</s1>
<s2>87755 Neubiberg</s2>
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<country>Allemagne</country>
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<wicri:noRegion>87755 Neubiberg</wicri:noRegion>
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<author><name sortKey="Lowe, Benjamin" uniqKey="Lowe B">Benjamin Löwe</name>
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<author><name sortKey="Ravelli, Luca" uniqKey="Ravelli L">Luca Ravelli</name>
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<author><name sortKey="Sojak, Stanislav" uniqKey="Sojak S">Stanislav Sojak</name>
<affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Department of Nuclear Physics and Technology, Slovak University of Technology in Bratislava, Ilkovičova 3</s1>
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<author><name sortKey="Liliental Weber, Zuzanna" uniqKey="Liliental Weber Z">Zuzanna Liliental-Weber</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road</s1>
<s2>Berkeley, CA 94720</s2>
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<author><name sortKey="Jones, Rebecca E" uniqKey="Jones R">Rebecca E. Jones</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road</s1>
<s2>Berkeley, CA 94720</s2>
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<author><name sortKey="Yu, Kin M" uniqKey="Yu K">Kin M. Yu</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road</s1>
<s2>Berkeley, CA 94720</s2>
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<author><name sortKey="Walukiewicz, Wladek" uniqKey="Walukiewicz W">Wladek Walukiewicz</name>
<affiliation wicri:level="1"><inist:fA14 i1="05"><s1>Materials Sciences Division, Lawrence Berkeley National Laboratory, 1 Cyclotron Road</s1>
<s2>Berkeley, CA 94720</s2>
<s3>USA</s3>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
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<wicri:noRegion>Berkeley, CA 94720</wicri:noRegion>
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</author>
<author><name sortKey="Schaff, William J" uniqKey="Schaff W">William J. Schaff</name>
<affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Department of Electrical and Computer Engineering, Cornell University, 425 Philips Hall</s1>
<s2>Ithaca, NY 14853</s2>
<s3>USA</s3>
<sZ>11 aut.</sZ>
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<country>États-Unis</country>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Fluence</term>
<term>Gallium nitride</term>
<term>Indium nitride</term>
<term>Ion irradiation</term>
<term>Irradiation defect</term>
<term>MOCVD</term>
<term>Molecular beam epitaxy</term>
<term>Positron annihilation</term>
<term>Radiation effects</term>
<term>Rapid thermal annealing</term>
<term>Vacancies</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Défaut irradiation</term>
<term>Annihilation positon</term>
<term>Effet rayonnement</term>
<term>Recuit thermique rapide</term>
<term>Epitaxie jet moléculaire</term>
<term>Méthode MOCVD</term>
<term>Fluence</term>
<term>Lacune</term>
<term>Irradiation ion</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>InN</term>
<term>GaN</term>
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<front><div type="abstract" xml:lang="en">We use positron annihilation to study 2-MeV <sup>4</sup>
He<sup>+</sup>
 irradiated and subsequently rapid-thermal-annealed InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapour deposition. The irradiation fluences were in the range 5 x 10<sup>14</sup>
-2 × 10<sup>16</sup>
cm<sup>-2</sup>
. In vacancies are introduced in the irradiation at a low rate of 100cm<sup>-1</sup>
, with their concentration saturating in the mid-10<sup>17</sup>
 cm<sup>-3</sup>
 range at an irradiation fluence of 2 × 10<sup>15</sup>
 cm<sup>-2</sup>
. The annealing, performed at temperatures between 425 and 475 °C, is observed to result in an inhomogeneous redistribution of the In vacancies. The behaviour is opposite to GaN, where Ga vacancies are introduced at a much higher rate of 3600 cm<sup>-1</sup>
 showing no detectable saturation. About half of the Ga vacancies are found to recover in the annealing, in agreement with previous studies, while the remaining Ga vacancies undergo no spatial redistribution.</div>
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<fA11 i1="01" i2="1"><s1>REURINGS (Floris)</s1>
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<sZ>5 aut.</sZ>
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<fA14 i1="04"><s1>Department of Nuclear Physics and Technology, Slovak University of Technology in Bratislava, Ilkovičova 3</s1>
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<sZ>6 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>We use positron annihilation to study 2-MeV <sup>4</sup>
He<sup>+</sup>
 irradiated and subsequently rapid-thermal-annealed InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapour deposition. The irradiation fluences were in the range 5 x 10<sup>14</sup>
-2 × 10<sup>16</sup>
cm<sup>-2</sup>
. In vacancies are introduced in the irradiation at a low rate of 100cm<sup>-1</sup>
, with their concentration saturating in the mid-10<sup>17</sup>
 cm<sup>-3</sup>
 range at an irradiation fluence of 2 × 10<sup>15</sup>
 cm<sup>-2</sup>
. The annealing, performed at temperatures between 425 and 475 °C, is observed to result in an inhomogeneous redistribution of the In vacancies. The behaviour is opposite to GaN, where Ga vacancies are introduced at a much higher rate of 3600 cm<sup>-1</sup>
 showing no detectable saturation. About half of the Ga vacancies are found to recover in the annealing, in agreement with previous studies, while the remaining Ga vacancies undergo no spatial redistribution.</s0>
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<s5>15</s5>
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<s5>15</s5>
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<s5>15</s5>
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<s4>INC</s4>
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<s4>INC</s4>
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<fN21><s1>186</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>European Materials Research Society (E-MRS) </s1>
<s3>Warsaw POL</s3>
<s4>2009-09-14</s4>
</fA30>
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Irradiation-induced defects in InN and GaN studied with positron annihilation

Irradiation-induced defects in InN and GaN studied with positron annihilation

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English descriptors

Abstract

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